, u na. 20 stern ave. springfield, new jersey 07081 u.s.a. npnBUX41N telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 high current, high speed, high power transistor absolute maximum ratings symbol vceo vcbo vcex vebo ic icm ib pt tj tsta ratings collector-emitter voltage collector-base voltage collector-emitter voltage emitter-base voltage collector current collector peak current base current total power dissipation junction temperature storage temperature ib = 0 ie = 0 vbe = -1.5v lc=0 td = 10ms @ tc = 25 value 160 220 220 7 18 25 3.6 120 200 -65 to +200 unit v v - v v a a a watts c c thermal characteristics symbol rthjc ratings thermal resistance, junction to case value 1.46 unit c/w h .875 ~*j max. \ 135 max. .525 r max. quality semi-conductors
electrical characteristics tc=25c unless otherwise noted symbol vceo(sus) vebo iceo icex iebo hfe vce(sat) vbeisat) is/b es/b fr ton ts tf ratings collector-emitter sustaining voltage (*) emitter-base voltage collector cutoff current collector cutoff current emitter cutoff current dc current gain (*) collector-emitter saturation voltage (*) base-emitter saturation voltage n second breakdown collector current clamped es/b collector current transition frequency turn-on time storage time file time test condition(s) lc= 200 ma lc= 0 a, |e= 50 ma vce= 130v, ib=oa vce= 220 v,vbe= -1.5v vce=220v vbe=-1.5v tcase=125c veb= 5.0 v, lc= 0 a lc= 8 a, vce= 4.0 v ic=12a, vce=4.0v lc= 8 a, ib= 0.8 a lc=12a, ib=1-5a ic=12a, ib=1.5a vce=30v,ts = 1s vce= 100v, ts= 1s vc|amp=160v l= 500 uh vce=15v, lc=1 a f= 10mhz lc= 12 a, ib= 1-5 a vcc= 30 v ic=12a, vcc=30v ibi = -'b2 = 1.5 a min 160 7 - - - - 15 8 - - - 4 0.27 12 8 - - - typ - - - - - - - - 0.5 0.75 1.5 - - - - 0.35 0.85 0.14 max - - 1 1 5 1 45 - 1.2 1.6 2 - - - - 1.3 1.5 0.8 unit v v ma ma ma - v a a mhz ms (*) pulse duration = 300 us, duty cycle <= 2%
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